PMO OpenIR
investigationofembeddingimpedancecharacteristicfora660ghzwaveguidesismixer
Zhang Wen; Shan Wenlei; Shi Shengcai
2002
Source Publication红外与毫米波学报
ISSN1001-9014
Volume021Issue:006Pages:465
Abstract基于三维电磁场仿真软件HFSS和类似于准光学天线的集总源法,对一660GHz超导混频器的嵌入阻抗在整个600-720GHz的工作频带范围内进行了详细的分析研究。同时,还系统地分析计算了SIS结芯片的馈点偏移(包括水平偏移和垂直偏移)及芯片厚度和背向短路器长度变化所产生的影响,分析结果表明,该混频器的嵌入阻抗为35Ω左右,而且在整个工作频带内变化缓慢,能够实现宽频带匹配。SIS结芯片馈点的位置对嵌入阻抗没有太大的影响,但芯片厚度的影响非常明显。这些结果对超导SIS混频器的研制有很好的指导意义。
Language英语
Document Type期刊论文
Identifierhttp://libir.pmo.ac.cn/handle/332002/31111
Collection中国科学院紫金山天文台
Affiliation中国科学院紫金山天文台
First Author Affilication中国科学院紫金山天文台
Recommended Citation
GB/T 7714
Zhang Wen,Shan Wenlei,Shi Shengcai. investigationofembeddingimpedancecharacteristicfora660ghzwaveguidesismixer[J]. 红外与毫米波学报,2002,021(006):465.
APA Zhang Wen,Shan Wenlei,&Shi Shengcai.(2002).investigationofembeddingimpedancecharacteristicfora660ghzwaveguidesismixer.红外与毫米波学报,021(006),465.
MLA Zhang Wen,et al."investigationofembeddingimpedancecharacteristicfora660ghzwaveguidesismixer".红外与毫米波学报 021.006(2002):465.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Zhang Wen]'s Articles
[Shan Wenlei]'s Articles
[Shi Shengcai]'s Articles
Baidu academic
Similar articles in Baidu academic
[Zhang Wen]'s Articles
[Shan Wenlei]'s Articles
[Shi Shengcai]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Zhang Wen]'s Articles
[Shan Wenlei]'s Articles
[Shi Shengcai]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.