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Microwave loss of DC sputtered NbTiN microstrip lines
Shan, Wenlei1; Sekimoto, Yutaro2; Noguchi, Takashi2
AbstractAmorphous NbTiN is widely applied in superconducting electronic devices owing to its merits of wide energy gap, high Tc, and mitigated requirement in fabrication. Its highly disordered feature yields considerable kinetic inductance, making it an ideal material for parametric amplification. To build up the correspondence between the fabrication conditions and the desirable electrical performance, we designed, fabricated, and measured NbTiN microstrip resonators at microwave frequencies. The principal result is that the unloaded Q factor of the resonators does not depend on the film normal state resistivity, which largely depends on the sputtering pressure. This result is consistent with the dirty superconductor theories. (C) 2015 The Japan Society of Applied Physics
Subject Area天文和天体物理
WOS HeadingsScience & Technology ; Physical Sciences
Indexed BySCI
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000362024900003
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Document Type期刊论文
Affiliation1.Chinese Acad Sci, Purple Mt Observ, Nanjing 210008, Jiangsu, Peoples R China
2.Natl Astron Observ Japan, Mitaka, Tokyo 1818588, Japan
Recommended Citation
GB/T 7714
Shan, Wenlei,Sekimoto, Yutaro,Noguchi, Takashi. Microwave loss of DC sputtered NbTiN microstrip lines[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2015,54(9):90303.
APA Shan, Wenlei,Sekimoto, Yutaro,&Noguchi, Takashi.(2015).Microwave loss of DC sputtered NbTiN microstrip lines.JAPANESE JOURNAL OF APPLIED PHYSICS,54(9),90303.
MLA Shan, Wenlei,et al."Microwave loss of DC sputtered NbTiN microstrip lines".JAPANESE JOURNAL OF APPLIED PHYSICS 54.9(2015):90303.
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